18 t anceram ? c hip c a p ac i tors tanceram ? chip capacitors can replace tantalum capacitors in many applications and offer several key advantages over traditional tantalums. because tanceram ? capacitors exhibit extremely low esr, equivalent circuit performance can often be achieved using considerably lower capacitance values. low dc leakage reduces current drain, extending the battery life of portable products. tanceram ? high dc breakdown voltage ratings offer improved reliability and eliminate large voltage de-rating common when designing with tantalums. a d v antage s ? low esr ? low dc leakage ? higher surge voltage ? non-polarized devices ? reduced chip size ? improved reliability ? higher insulation resistance ? higher ripple current a pplication s ? switching power supply smoothing (input/output) ? backlighting inverters ? dc/dc converter smoothing (input/output) ? general digital circuits h ow to o rder tanceram ? part number written: 100r15x106mv4e 100 r15 x 106 m v 4 e voltage size dielectric capacitance tolerance termination marking packing 6r3 = 6.3 v 100 = 10 v 160 = 16 v 250 = 25 v 500 = 50 v 101 = 100 v see chart w = x7r x = x5r 1st two digits are significant; third digit denotes number of zeros. 105 = 1.00 f 476 = 47.0 f 107 = 100 f k = 10% m = 20% v = nickel barrier with 100% tin plating (matte) t = snpb* (*available on select parts) 4 = unmarked code type reel e plastic 7 t paper 7 tape specifications conform to eia rs481 www.johanso n dielectrics.com
19 c a s e s ize c apacitance s election eia / jdi inches (mm) vdc 1.0 f 2.2 f 3.3 f 4.7 f 10 f 22 f 47 f 100 f 0402 r07 l w t eb .040 .004 .020 .004 .025 max. .008 .004 (1.0 2 .10 ) ( 0.51 .10 ) (0.64) ( 0. 20 .10 ) 16 10 6.3 0603 r14 l w t eb .063 .008 .032 .008 .035 max. .010.005 (1.60 .20) (0.81 .20) (0.89) (. 25.13) 25 16 10 6.3 0805 r15 l w t eb .080 .010 .050 .010 .060 max. .020.010 (2.03 .25) (1.27 .25) (1.52) (0.51.25 ) 50 25 16 10 6.3 1206 r18 l w t eb .125 .013 .062 .010 .070 max. .020 +.015-0.01 (3.17 . 3 5) (1.57 .25) (1.78) (0.51+.38-.25) 100 50 35 25 16 10 6.3 1210 s41 l w t eb .126 .016 .098 .012 .110 m a x. .020 +.015-.010 (3.20 .40) (2.50 .30) (2.8) (0.51+.38-.25) 100 50 35 25 16 10 6.3 1812 s43 l w t eb .177 .016 .126 .015 .14 0 m a x. .035 .020 (4.50 .40) (3.20 .38) (3.55) (0.89 0.51) 100 50 25 16 10 6.3 w x w x w x w x w x w x w x w x e lectrical c h aracteri s tic s dielectric: x7r x5r t emperature coefficient : 15% (-55 to +125c) 15% (-55 to +85c) d issipation f actor: for 50 vdc: 5% max. for 35 vdc: 10% max. for 50 vdc: 5% max. for 35 vdc: 10% max. insu lation r esistance (min. @ 25c, wvdc) 100 ?f or 10 g?, whichever is less dielectric strength: 2.5 x wvdc, 25c, 50ma max. test conditions: capacitance values 10 f: 1.0khz50hz @ 1.00.2 vrms capacitance values > 10 f: 120hz10hz @ 0.5v0.1 vrms other: see page 35 for additional dielectric specifications. t anceram ? c hip c a p ac i tors l w t e/b dielectric w (x7r) x (x5r) www.johanso n dielectrics.com
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